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  july 2008 rev 2 1/18 18 stb30nm60n,sti30 nm60n,stf30nm60n stp30nm60n, STW30NM60N n-channel 600 v, 0.1 ? , 25 a, mdmesh? ii power mosfet to-220, to-220fp, to-247, d 2 pa k , i 2 pa k features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices is designed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on- resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d p w stb30nm60n 650 v <0.13 ? 25a 190 w sti30nm60n 650 v <0.13 ? 25a 190 w stf30nm60n 650 v <0.13 ? 25a (1) 1. limited only by maximum temperature allowed 40 w stp30nm60n 650 v <0.13 ? 25a 190 w STW30NM60N 650 v <0.13 ? 25a 190 w 1 3 1 2 3 1 2 3 1 2 3 1 2 3 d2pak i2pak to-220 to-247 to-220fp table 1. device summary order codes marking package packaging stb30nm60n 30nm60n d2pak tape and reel sti30nm60n 30nm60n i2pak tube stf30nm60n 30nm60n to-220fp tube stp30nm60n 30nm60n to-220 tube STW30NM60N 30nm60n to-247 tube www.st.com datasheet.in
contents stb30nm60n,sti30nm60n,s tf30nm60n,stp30nm60n,STW30NM60N 2/18 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp 30nm60n,STW30NM60N electrical ratings 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 i2pa k to-247 d2pak to-220fp v ds drain-source voltage (v gs =0) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 25 25 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 15.8 15.8 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 100 100 (1) a p tot total dissipation at t c = 25 c 190 40 w dv/dt (3) 3. i sd 25a, di/dt 400a/s, v dd =80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating juncion temperature 150 c table 3. thermal data symbol parameter to-220 i2pak to-247 d2pak to-220fp unit r thj-case thermal resistance junction-case max 0.66 3.1 c/w r thj-pcb thermal resistance junction-pcb max -- -- -- 30 -- c/w r thj-amb thermal resistance junction-amb max 62.5 50 -- 62.5 c/w t l maximum lead temperature for soldering purposes 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 900 mj datasheet.in
electrical characteristics stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 4/18 2 electrical characteristics (tcase =25c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on static drain-source on resistance v gs = 10 v, i d = 12.5 a 0.1 0.13 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 12.5 a 25 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 2700 210 22 pf pf pf c oss eq. equivalent output capacitance v gs = 0, v ds = 0 to 480 v 66 pf r g gate input resistance f=1mhz gate dc bias=0 test signal level=20 mv open drain 3 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480 v, i d = 25 a, v gs = 10 v (see figure 19) 91 14 50 nc nc nc datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp30nm60n ,STW30NM60N electrical characteristics 5/18 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 12.5 a, r g = 4.7 ?, v gs = 10 v (see figure 18) 20 24 125 70 ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 25 100 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 25 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s v dd = 100 v (see figure 23) 540 10 36 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s v dd = 100 v tj = 150c (see figure 23) 630 12 36 ns c a datasheet.in
electrical characteristics stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 6/18 2.1 electrical characteri stics (curves) figure 2. safe operating area for to-220 / d2pak / i2pak figure 3. thermal impedance for to-220 / d2pak / i2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp30nm60n ,STW30NM60N electrical characteristics 7/18 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations 0 5 10 15 20 25 3 0v s d (v) 0 5 10 15 20 25 3 0 i d (a) 4v 5v v g s =10v am00051v1 0 1 2 3 4 5 i d (a) 0 24 6 8 v g s (v) am00052v1 0.5 5.5 10.5 15.5 20.5 25.5 3 0.5 gf s ( s ) 0 5 10 15 20 25 3 0 am0004 8 v1 t j =-50c 25c 150c i d (a) 0.015 0.0 3 5 0.055 0.075 0.095 0.115 0.1 3 5 r d s (on) 0 5 10 15 20 25 3 0 ( ) am00046v1 i d (a) v g s =10v i d =12.5a 0 2 4 6 8 10 12 v g s (v) 0204060 8 0 100 qg(nc) v dd =4 8 0v i d =25a am00045v1 1 10 100 1000 10000 c(pf) v g s (v) 0.1 110100 am00044v1 ci ss co ss cr ss datasheet.in
electrical characteristics stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 8/18 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature 0.7 0.75 0. 8 0. 8 5 0.9 0.95 1 1.05 1.1 v g s (th) -50 -25 0 25 50 75 100 125 150 (norm) t j (c) am0004 3 v1 i d =250 a 0.5 0.7 0.9 1.1 1. 3 1.5 1.7 1.9 2.1 r d s (on) -50 -25 0 25 50 75 100 125 150 (norm) t j (c) am00047v1 0 0.2 0.4 0.6 0.8 1 v sd (v) i s d (a) 0 10 20 am00050v1 t j =-50c 25c 150c 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 bv d ss -50 -25 0 25 50 75 100 125 150 (norm) t j (c) am00049v1 datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,s tp30nm60n,STW30NM60N test circuits 9/18 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform datasheet.in
package mechanical data stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 10/18 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp30nm 60n,STW30NM60N package mechanical data 11/18 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116 datasheet.in
package mechanical data stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 12/18 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.17 3 0.1 8 1 b 2.5 2.7 0.0 98 0.106 d 2.5 2.75 0.0 98 0.10 8 e 0.45 0.70 0.017 0.027 f 0.75 1.00 0.0 3 00.0 39 f1 1.15 1.50 0.045 0.067 f2 1.15 1.50 0.045 0.067 g4. 9 55.200.1 9 50.204 g1 2.40 2.70 0.0 9 4 0.106 h 10 10.40 0. 393 0.40 9 l2 16 0.6 3 0 l 3 2 8 .6 3 0.6 1.126 1.204 l4 9 . 8 0 10.60 0. 38 5 0.417 l5 2. 93 .6 0.114 0.141 l6 15. 9 0 16.40 0.626 0.645 l7 99 . 3 00. 3 54 0. 3 66 di a3 3 .2 0.11 8 0.126 to-220fp mechanical data l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 7012510-i di a datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp30nm 60n,STW30NM60N package mechanical data 13/18 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data datasheet.in
package mechanical data stb30nm60n,sti 30nm60n,stf30nm60n,stp30nm60n,STW30NM60N 14/18 i2pak (to-262) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 2.40 2.72 0.094 0.107 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.2 3 1. 3 20.04 8 0.052 d 8 .95 9. 3 50. 3 52 0. 3 6 8 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0. 3 9 3 0.410 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l2 1.27 1.40 0.050 0.055 datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp30nm 60n,STW30NM60N package mechanical data 15/18 d2pak (to-263) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m datasheet.in
packaging mechanical data 16/18 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data datasheet.in
stb30nm60n,sti30nm60n,stf30nm60n,stp 30nm60n,STW30NM60N revision history 17/18 6 revision history table 9. document revision history date revision changes 23-oct-2007 1 first release. 09-jul-2008 2 document status promoted: from preliminary data to datasheet. datasheet.in
stb30nm60n,sti30nm60n,stf30 nm60n,stp30nm60n,STW30NM60N 18/18 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com datasheet.in


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